Dr. rer. nat. Stiven Forti


Main Focus

Specific Interests and Goals:
In particular, the growth and characterization of epitaxial graphene grown on the Si terminated SiC(0001) surface, is at the center of my research activity. Large-area homogeneous epitaxial graphene is obtained via the solid stade decomposition of SiC by thermally activating the sublimation of Si from the surface in Ar atmosphere. The graphene obtained in this way can be decoupled from the substrate via intercalation of different elements, in particular H[1] and Ge[2]. Morphology, surface structure, chemistry and electronic properties of these systems are widely investigated with all the surface analysis techniques available to the group. One the the major tasks of my project is to realize and characterize graphene-based 1-dimensional nanostructures. These can be achieved by pursuing different ways from exploiting the template provided by the SiC(0001) vicinal surfaces, to the lithographic definition of a pattern on the SiC basal plane as a starting point for the ribbons growth. The catalythic effect of metallic nanoparticles to etch graphene on preferential crystallographic directions will be also exploited and possibly combined with other methods.
 Publications:  S. Forti, K. V. Emtsev, C. Coletti, A. A. Zakharov, C. Riedl and U. Starke
Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization
Physical Review B 84, 125449 (2011)
K.V. Emtsev, A.A. Zakharov, C. Coletti, S. Forti and U. Starke
Ambipolar doping in quasi-free epitaxial graphene on SiC(0001) controlled by Ge intercalation
Phys. Rev. B 84, 125423 (2011)

Curriculum Vitae

College / University: 2003-2008  Università degli Studi di Trento (Italy)
Highest Degree: Master Degree in Base and Applied Matter Physics
 Major Interests:
Low dimensional solid state systems

Ph.D. exam:
February 2014 at the Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany)
Title of dissertation:
Large-area epitaxial graphene on SiC(0001): from decoupling to interface engineering

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